Medical devices are becoming more capable, more complicated, and more deployable in the field rather than in a hospital or a ...

Researchers from the University of Tokyo created a gate-all-around transistor made from gallium-doped indium oxide (InGaOx).

A new technical paper titled “Demonstration of Vertically Stacked ZnO/Te Complementary Field-Effect Transistor” was published by researchers at POSTECH and Mokpo National University. Abstract “The ...